Chemical-mechanical planarization or chemical-mechanical polishing, commonly abbreviated CMP is a global surface planarization technique. It planarizes the wafer surface by relative motion between wafer and polishing pad in the presence of slurry while applying pressure.
Conveying slurries high shear forces caused by Diaphragm- or Bellow pumps result in particle agglomerations. Microscratches originated by these oversized particles or particle agglomerations are one of the most important causes of defectivity during CMP.
Due to the low shear force design LEVITRONIX pumps can reduce Microscratches in CMP applications by up to 80% and therefore significantly increase your yield!