CMP Introduction
Chemical-mechanical planarization or chemical-mechanical polishing, commonly abbreviated CMP is a global surface planarization technique. It planarizes the wafer surface by relative motion between wafer and polishing pad in the presence of slurry while applying pressure.
Conveying slurries high shear forces caused by Diaphragm- or Bellow pumps result in particle agglomerations. Microscratches originated by these oversized particles or particle agglomerations are one of the most important causes of defectivity during CMP.
Due to the low shear force design LEVITRONIX pumps can reduce Microscratches in CMP applications by up to 80% and therefore significantly increase your yield!
CMP Process Tool
LEVITRONIX pump systems (green line) have a low shear stress design and therefore do not increase particle agglomerations. Microscratches can be reduced up to 80% and therefore increase the yield significantly. Source CT Associates
Typical Microscratches on a Polished Wafer Surface with Diaphragm Pump. Data St. Lawrence Nanotech
Reduced Microscratches on a Polished Wafer Surface using LEVITRONIX Pumps. Data St. Lawrence Nanotech
